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Ultra- Flat Prime-Grade Silicon/Silica Wafers
We offer ultra-flat silicon and silica wafers of the prime grade to our laboratory-based clients for various research applications. These silicon and SiO2 thermal oxide wafers are perfect for chemical deposition or cell growth. Our diced silicon wafers (5 mm × 5 mm, 10 mm × 10 mm, or other customized sizes) with or without dry oxide coatings are ideal for direct AFM and SEM imaging. The silica substrates are silicon substrates uniformly coated with a thermally grown SiO2 surface layer. Compared with the traditional chemical vapor deposition (CVD) method, dry thermal oxidation provides a higher uniformity and a higher dielectric strength. For our silicon wafers coated with oxide layers (i.e. SiO2 fused silica wafer), we only use the dry process involving molecular oxygen to create the dry thermal oxide layer (100 nm ~ 500 nm) for all the thermal layers on top of the silicon wafers. For our silicon wafers with thicker oxide layers (i.e. 500 nm ~ 1 mm and beyond), we use the combination of dry and wet processes (i.e. dry oxides on top and bottom and wet oxides in between).
We also provide fused silica/quartz wafers (2 inches ~ 6 inches), and they are available in two grades, JGS1 and JGS2, respectively. Due to the low thermal expansion coefficient and high optical transmission, these quartz wafers have been widely used for optical-related and research-based applications. JGS1 grade contains a large number of hydroxyl groups (2000 ppm) and reaches a transmittance of 90% in the short-wave ultraviolet region. The JGS2 quartz glass produced by the hydrogen-oxygen flame is widely used for common applications that do not require a high transmission rate in the deep UV (DUV) region below 300 nm.
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Technical Processing Data:
Prime-Grade silicon wafers and SiO2 thermal oxide wafers:
Czochralski (CZ) growth method for standard wafers doped with Boron (i.e. P-type silicon wafers) or phosphorus or arsenic (i.e. N-type silicon wafers)
Floating zone (FZ ) growth method for intrinsic/undoped silicon wafers
Orientation: <100>+/- 0.5° or <111>+/- 0.5°
TIR < 3 μm, TTV < 10 μm, BOW < 10 μm, Roughness < 0.5 nm
Prime-Grade fused silica/quartz wafers
TTV < 5 μm, BOW < 30 μm, Roughness < 1.0 nm
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Our capability for customized silicon/silica/fused silica substrates
Size:
Standard Wafers: 2 inches (i.e. 50.8 mm) ~ 6 inches (i.e. 150 mm)
Customized Round Substrates: 1.00 mm ~ 150 mm
Customized Square Substrates: 5.00 mm ~ 150 mm
Diced Substrates: customized shape and/or sizes
Thickness: 100 μm ~ 10 mm
Resistivity: <0.001 Ω·cm ~ >10,000 Ω·cm
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5 mm x 5 mm diced chips in gel membrane box (25 pieces per box) are available for silicon/silica substrates with a thickness of 525 µm +/- 10 µm. 10 mm x 10 mm diced chips in gel membrane box (25 pieces per box) are available for silicon substrates with a thickness of 650 µm +/- 10 µm. Diced chips with other thicknesses are available on a customized basis.
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The prime-grade P-type wafers are known for their excellent heat tolerance. No emission of gas or elements is observed for these wafers for heating at 1,000°C / 1832°F. Due to the stability at high temperatures, silicon wafers with dry thermal oxides are available in P-type wafers.
List of In-Stock Silicon, Thermal Oxide, Fused Silica Substrates in Canadian Dollars
Ultra- Flat Single-Side Polished (SSP) Silicon Substrates
Size: Two Inch 2'' (50.8 mm), Thickness: 180 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Size: Two Inch 2'' (50.8 mm), Thickness: 300 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Size: Two Inch 2'' (50.8 mm), Thickness: 300 um, Orientation: <100>,
Type/Dopant: N-Type/Phosphorus-Doped, Resistivity: 1 - 30 Ω·cm
Size: Three Inch 3'' (76.2 mm), Thickness: 400 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Size: Four Inch 4'' (100.0 mm), Thickness: 525 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Size: Four Inch 4'' (100.0 mm), Thickness: 500 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 0.001 - 0.005 Ω·cm
Size: Four Inch 4'' (100.0 mm), Thickness: 1000 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Size: Four Inch 4'' (100.0 mm), Thickness: 525 um, Orientation: <100>,
Type/Dopant: Undoped/Intrinsic, Resistivity: >10000 Ω·cm
Size: Six Inch 6'' (150.0 mm), Thickness: 650 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Size: Six Inch 6'' (150.0 mm), Thickness: 500 um, Orientation: <100>,
Type/Dopant: N-Type/Phosphorus-Doped, Resistivity: 1 - 30 Ω·cm
Size: 5.00 mm × 5.00 mm Diced Chips, Thickness: 525 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Size: 10.00 mm × 10.00 mm Diced Chips, Thickness: 650 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Ultra- Flat Double-Side Polished (DSP) Silicon Wafers
Size: Four Inch 4'' (100.0 mm); Thickness: 525 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 0.001 - 0.005 Ω·cm
Size: Four Inch 4'' (100.0 mm); Thickness: 525 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Size: Four Inch 4'' (100.0 mm); Thickness: 300 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 0.001 - 0.005 Ω·cm
Size: Four Inch 4'' (100.0 mm); Thickness: 300 um, Orientation: <100>,
Type/Dopant: N/Phosphorus-Doped, Resistivity: 1 - 30 Ω·cm
Size: Four Inch 4'' (100.0 mm); Thickness: 300 um, Orientation: <100>,
Type/Dopant: N-Type/Phosphorus-Doped, Resistivity: 0.001 - 0.005 Ω·cm
Size: Six Inch 6'' (150.0 mm); Thickness: 650 um, Orientation: <100>,
Type/Dopant: P-Type/Boron-Doped, Resistivity: 1 - 30 Ω·cm
Ultra- Flat Single-Side Polished (SSP) Silicon Wafers with Dry Thermal Oxides (i.e. Silica Wafers)
Size: Four Inch 2'' (50.8 mm), Thickness: 300 um, Orientation: <100>,
Type: P/Boron-Doped, Resistivity: 1 - 30 Ω·cm
200 nm Dry Oxide Layers on Both Sides
Size: Four Inch 2'' (50.8 mm), Thickness: 300 um, Orientation: <100>,
Type: P/Boron-Doped, Resistivity: 1 - 30 Ω·cm
300 nm Dry Oxide Layers on Both Sides
Size: Four Inch 4'' (100.0 mm), Thickness: 525 um, Orientation: <100>,
Type: P/Boron-Doped, Resistivity: 1 - 30 Ω·cm
200 nm Dry Oxide Layers on Both Sides
Size: Four Inch 4'' (100.0 mm), Thickness: 525 um, Orientation: <100>,
Type: P/Boron-Doped, Resistivity: 1 - 30 Ω·cm
300 nm Dry Oxide Layers on Both Sides
Size: Four Inch 6'' (150.0 mm), Thickness: 650 um, Orientation: <100>,
Type: P/Boron-Doped, Resistivity: 1 - 30 Ω·cm
200 nm Dry Oxide Layers on Both Sides
Size: 5.00 mm x 5.00 mm Diced Chips, Thickness: 525 um, Orientation: <100>,
Type: P/Boron-Doped, Resistivity: 1 - 30 Ω·cm
200 nm Dry Oxide Layers on Both Sides
Ultra- Flat Double-Side Polished (DSP) Fused Silica/Quartz Wafers
Size: Four Inch 4'' (100.0 mm), Thickness: 400 um, Grade: JGS2
Size: Four Inch 4'' (100.0 mm), Thickness: 400 um, Grade: JGS1
1
Piece
$ 40
$ 40
$ 60
$ 60
$ 90
10
Pieces
25
Pieces
US
Amazon
UK
Amazon
$ 325
$ 695
$ 325
$ 695
$ 395
$ 795
$ 395
$ 795
$ 625
$ 1295
$ 60
Notes:
1. The prices listed above are in Canadian Dollars (CND$), and please refer to the blow exchange box for the most current daily exchange rates.
2. We accept both online purchases at our online store or Amazon stores and invoiced orders (Net 30 Terms). In-stock items will be dispatched within 1-3 business days. The lead time for customized orders is typically within 10 business days and will be evaluated on a case-by-case basis.
3. Shipping Locations for our clients are listed below.
Orders destined for the United States will be shipped from one of the two US offices below.
Unit 390, 701 Harrison Ave, Blaine, WA 98230 US
Unit 4, 2045 Niagara Falls Blvd, Niagara Falls, NY 14304 US
Orders destined for the UK will be shipped from our UK office.
Office 24743, Courier Point, 13 Freeland Park, Wareham Road, Poole, Dorset, BH16 6FH, UK
Orders destined for Europe will be shipped from our EU office.
Allée Primavera 78, Annecy, Pringy, 74370, France
Orders destined for Canada and other International destinations will be shipped from our Canadian headquarters.
135 - 3800 Wesbrook Mall, University of British Columbia Campus, Vancouver, BC, V6S2L9, Canada
No duties or any additional taxes for the orders delivered to Canadian, US, UK, and EU addresses, regardless of the sales channel. For other International shipping addresses, recipients are responsible for local duties and taxes.
4. Free exchanges or full refunds will be offered within 30 days after the order fulfillment without any questions asked if the ordered items fail to meet customer expectations.
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