Ultra- Flat Highly Doped Silicon Wafers in Stock:  

• ​Option A: Size: Four Inch 4''(100.0 mm); Single-Side Polished, Thickness: 500 um+/- 10 um; Type: P/Boron-Doped; Orientation: <100>+/- 0.5°; Resistivity: 0.001 - 0.005 Ω·cm

• Option B: Size: Four Inch 4''(100.0 mm); Double-Side Polished, Thickness: 300 um+/- 10 um; Type: N/Phosphorus-Doped; Orientation: <100>+/- 0.5°; Resistivity: 0.001 - 0.005 Ω·cm  

Technical Processing Data:  

• Orientation: <100>+/- 0.5°;

• TIR < 3 μm, TTV < 10 μm, BOW < 10 μm

• Roughness < 0.5 nm;

Volume and Custom Orders Available Upon Request. Please send your questions or concerns to info@alphananotechne.com.