Ultra-Flat Single-Side Polished (SSP) Silicon Wafers with Dry Oxides (i.e. Silica Wafers) in Stock:
Option A: Size: Four Inch 2''(50.8 mm); Thickness: 300 um+/- 10 um; Type: P/Boron-Doped; Orientation: <100>+/- 0.5°; Resistivity: 1 - 30 Ω·cm; 200 nm+/-10 nm Dry Oxide Layers on Both Sides
Option B: Size: Four Inch 2''(50.8 mm); Thickness: 300 um+/- 10 um; Type: P/Boron-Doped; Orientation: <100>+/- 0.5°; Resistivity: 1 - 30 Ω·cm; 300 nm+/-10 nm Dry Oxide Layers on Both Sides
Option C: Size: Four Inch 4''(100.0 mm); Thickness: 525 um+/- 10 um; Type: P/Boron-Doped; Orientation: <100>+/- 0.5°; Resistivity: 1 - 30 Ω·cm; 200 nm+/-10 nm Dry Oxide Layers on Both Sides
Option D: Size: Four Inch 4''(100.0 mm); Thickness: 500 um+/- 10 um; Type: P/Boron-Doped; Orientation: <100>+/- 0.5°; Resistivity: 1 - 30 Ω·cm; 300 nm+/-10 nm Dry Oxide Layers on Both Sides
Option E: Size: Four Inch 6''(150.0 mm); Thickness: 650 um+/- 10 um; Type: P/Boron-Doped; Orientation: <100>+/- 0.5°; Resistivity: 1 - 30 Ω·cm; 200 nm+/-10 nm Dry Oxide Layers on Both Sides
Option F: Size: 5.00 mm x 5.00 mm Diced Chips; Thickness: 525 um+/- 10 um; Type: P/Boron-Doped; Orientation: <100>+/- 0.5°; Resistivity: 1 - 30 Ω·cm; 200 nm+/-10 nm Dry Oxide Layers on Both Sides
Technical Processing Data:
Orientation: <100>+/- 0.5°;
TIR < 3 μm, TTV < 10 μm, BOW < 10 μm
Roughness < 0.5 nm;
Volume and Custom Orders Available Upon Request. Please send your questions or concerns to info@alphananotechne.com.